DWL 2000 GS/DWL 4000 GS Laser Lithography
The industrial-level grayscale lithography tool
The DWL 2000 GS / DWL 4000 GS Laser Lithography systems are fast and flexible high-resolution pattern generators. They are optimized for industrial-level Grayscale Lithography and designed for high-throughput patterning of masks and wafers for integrated circuits, MEMS, micro-optic and microfluidic devices, sensors, holograms, and security features on banknotes and ID cards.
The Professional Grayscale Lithography Mode enables patterning of complex 2.5D structures in thick photoresist over large areas. With a minimum feature size of 500 nm, a write area of up to 400 x 400 mm2 and optional automatic loading system, the DWL 2000 GS / DWL 4000 GS systems are particularly suitable for wafer-level micro-optics used for telecommunications, illumination, and industrial display manufacturing, as well as for device fabrication in life sciences.
Customer applications
2.5D features created by Grayscale Lithography are in many cases used for micro-optics. A surface may for example be structured in a targeted way to lead to controlled reflection or diffusion of light. The image shows such a type of periodic surface patterning featuring sharp peaks and tips. (Courtesy of IGI)
MR-DWL is a special negative resist that enables high-aspect ratio structures with an aspect ratio of up to 1:40. This epoxy-based photoresist from micro resist technology GmbH is specifically optimized for direct-write lithography and DWL systems. It is sensitive above 400 nm and can be applied in a thickness up to several hundreds of microns. (Courtesy of V. Cadarso and J. Brugger, EPFL)
A test pattern exposed with a DWL 2000 shows accurate alignment of elements exposed in two subsequent layers (arrows, crosses, arrow tips). Alignment is a crucial parameter for multilayer lithography applications, such as sensors and semiconductor devices. (Courtesy of Heidelberg Instruments)
Why customers choose our systems
“Since our open clean room facility Nanotechnology Hub in Kyoto University (Nano-hub) started in 2011, DWL 2000 is one of the most popular machines for Nano-hub users from both academia and industry. Every year, more than 50 users are using DWL for binary and grayscale lithography on photomask writing and wafer direct writing. We appreciate DWL for its high performance to adopt various requests from users and to extend our facility capability from semiconductor and MEMS to microfluidic devices and micro physiological systems.”
Prof. Dr. Toshiyuki Tsuchiya, Director of Nanotechnology Hub
Kyoto University, Kyoto, Japan
Technical Data
Write mode | I | II | III | IV | V |
|---|---|---|---|---|---|
Overlay [3σ, nm] (over 8” x 8”) | 300 | ||||
Pixel Grid Grayscale [nm] | 100 | 200 | 250 | 500 | 1000 |
Write Speed DWL 2000 GS [mm2/minute] | 12 | 50 | 75 | 270 | 870 |
Write Speed DWL 4000 GS [mm2/minute] | 12 | 50 | 75 | 270 | 1000 |
Exposure Time DWL 2000 GS: For 200 mm x 200 mm [hours] | 51 | 13.5 | 9 | 2.5 | 0.8 |
Exposure Time DWL 4000 GS: For 400 mm x 400 mm [hours] | 223 | 54 | 36 | 10 | 3 |
Maximum Dose [mJ/cm2 ] | 5600 | 1400 | 900 | 225 | 50 |
Writing performance - Binary | I | II | III | IV | V |
|---|---|---|---|---|---|
Minimum Feature Size [µm] | 0.5 | 0.7 | 0.8 | 1 | 2 |
Minimum Lines and Spaces [µm] | 0.7 | 0.9 | 1 | 1.5 | 3 |
Address Grid [nm] | 5 | 10 | 12.5 | 25 | 50 |
Edge Roughness [3σ, nm] | 40 | 50 | 60 | 80 | 110 |
CD Uniformity [3σ, nm] | 60 | 70 | 80 | 130 | 180 |
Registration [3σ, nm] | 200 | 200 | 200 | 200 | 200 |
Write Speed [mm²/minute] DWL 2000 GS | 12 | 50 | 75 | 270 | 870 |
Write Speed [mm²/minute] DWL 4000 GS | 12 | 50 | 75 | 270 | 1000 |
System features | - |
|---|---|
Light source | Diode laser with 405 nm |
Maximum substrate size | DWL 2000 GS: 9″ x 9″ / DWL 4000 GS: 17″ x 17″ |
Substrate thickness | 0 to 12 mm |
Maximum exposure area | DWL 2000 GS: 200 x 200 mm² / DWL 4000 GS: 400 x 400 mm² |
Temperature controlled flow box | Temperature stability ± 0.1°, ISO 4 environment |
Real-time autofocus | Optical autofocus or air-gauge autofocus |
Autofocus compensation range | 80 μm |
System dimensions | - |
|---|---|
Lithography unit (width × depth × height); weight | 2350 mm × 1650 mm × 2100 mm; 3000 kg |
Electronic rack (width × depth × height); weight | 800 mm × 600 mm × 1800 mm; 180 kg |
Installation requirements | - |
|---|---|
Electrical | 400 VAC ± 5 %, 50/60 Hz, 16 A |
Compressed air | 6 - 10 bar |
Cleanroom | ISO 6 or better recommended |
